Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. <p>This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike.</p> <ul> <li>Covers the most important materials within the field</li> <li>The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment</li> <li>Builds-on an established series known in the community</li> <li>Highly pertinent to current and future developments in telecommunications and computer-processing industries.</li> </ul>
